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Semiconducting GaAs p-type


  • High or low pressure LEC growing method is used
  • Zn doped
  • 2", 3" and 4" ingots
  • 2", 3" and 4" wafers one side polished
  • Test grade wafers available






2" Semiconducting Gallium Arsenide Wafers




 Crystal Orientation

(100) ± 0.25°

 

 (111) also available

 Off Orientation

up to 10°

 

 other upon request

 Flat Orientation

E/J or SEMI

 

 other upon request

 Diameter

50.8 ± 0.1

mm

 other upon request

 Dopand

Zn

 

 

 Resistivity

> 1 x 10-3

Ohm*cm

 

 Hall Mobility

low

cm2V-1s-1

 

 Carrier Concentration

2 x 1018 - 5 x 1019

cm-3

 other upon request

 Etch Pit Density

< 7 x 104

 cm-2

 typical < 5 x 104

 Thickness

450 ± 20

µm

 other upon request

 Surface Treatment

 

 

 

      Front Side

polished

 

 as cut or lapped / etched
 also available

      Back Side

 as lapped / etched

 

 as cut / etched

 Packaging

EMPAK® casette
FLUOROWARE® single wafer container

 













3" Semiconducting Gallium Arsenide Wafers




 Crystal Orientation

(100) ± 0.25°

 

 (111) also available

 Off Orientation

up to 10°

 

 other upon request

 Flat Orientation

E/J or SEMI

 

 other upon request

 Diameter

76.2 ± 0.1

mm

 other upon request

 Dopand

Zn

 

 

 Resistivity

> 1 x 10-3

Ohm*cm

 

 Hall Mobility

low

cm2V-1s-1

 

 Carrier Concentration

2 x 1018 - 5 x 1019

cm-3

 

 Etch Pit Density

< 1 x 105

 cm-2

 typical < 8 x 104

 Thickness

625 ± 25

µm

 other upon request

 Surface Treatment

 

 

 

      Front Side

polished

 

 as cut or lapped / etched
 also available

      Back Side

 as lapped / etched

 

 as cut / etched

 Packaging

EMPAK® casette
FLUOROWARE® single wafer container

 













4" Test Grade Gallium Arsenide Wafers




 Crystal Orientation

(100) ± 0.25°

 

 (111) also available

 Off Orientation

up to 10°

 

 other upon request

 Flat Orientation

E/J or SEMI

 

 other upon request

 Diameter

100 ± 0.1

mm

 other upon request

 Dopand

Zn

 

 

 Resistivity

> 1 x 10-3

Ohm*cm

 

 Hall Mobility

low

cm2V-1s-1

 

 Carrier Concentration

2 x 1018 - 5 x 1019

cm-3

 

 Etch Pit Density

< 2 x 105

 cm-2

 

 Thickness

625 ± 25

µm

 other upon request

 Surface Treatment

 

 

 

      Front Side

polished

 

 as cut or lapped / etched
 also available

      Back Side

 as lapped / etched

 

 as cut / etched

 Packaging

EMPAK® casette
FLUOROWARE® single wafer container

 








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