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Home » Products » VGF Production » Semi-insulating GaAs
Semi-insulating GaAs
- Vertical Gradient Freeze growing method is used
- 2", 3" and 4" ingots
- 2", 3" and 4" Wafers one side polished
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Crystal Orientation
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(100) ± 0.25°
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Off Orientation
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up to 10°
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other upon request
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Flat Orientation
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E/J or SEMI
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other upon request
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Diameter
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50.8 ± 0.1
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mm
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other upon request
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Resistivity
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> 1 x 107
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Ohm*cm
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Hall Mobility
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> 6 x 103
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cm2V-1s-1
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Etch Pit Density
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< 1 x 104
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cm-2
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Thickness
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500 ± 20
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µm
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other upon request
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Surface Treatment
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Front Side
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polished
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as cut or lapped / etched
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Back Side
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as lapped / etched
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as cut / etched
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Packaging
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EMPAK® casette
FLUOROWARE® single wafer container
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Crystal Orientation
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(100) ± 0.25°
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Off Orientation
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up to 10°
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other upon request
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Flat Orientation
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E/J or SEMI
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other upon request
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Diameter
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76.2 ± 0.1
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mm
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other upon request
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Resistivity
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> 1 x 107
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Ohm*cm
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Hall Mobility
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> 6 x 103
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cm2V-1s-1
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Etch Pit Density
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< 1 x 104
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cm-2
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Thickness
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625 ± 25
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µm
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other upon request
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Surface Treatment
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Front Side
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polished
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as cut or lapped / etched
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Back Side
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as lapped / etched
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as cut / etched
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Packaging
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EMPAK® casette
FLUOROWARE® single wafer container
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|
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Crystal Orientation
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(100) ± 0.25°
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|
|
Off Orientation
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up to 10°
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|
other upon request
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Flat Orientation
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E/J or SEMI
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|
other upon request
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Diameter
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100 ± 0.1
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mm
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other upon request
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Resistivity
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> 1 x 107
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Ohm*cm
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Hall Mobility
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> 6 x 103
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cm2V-1s-1
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Etch Pit Density
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< 1 x 104
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cm-2
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Thickness
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625 ± 25
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µm
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other upon request
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Surface Treatment
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Front Side
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polished
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|
as cut or lapped / etched
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Back Side
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as lapped / etched
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|
as cut / etched
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Packaging
|
EMPAK® casette
FLUOROWARE® single wafer container
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Home » Products » VGF Production » Semi-insulating GaAs
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